Specification	MBR20040CT

Current - Average Rectified (Io) (per Diode)	200 A
Current - Reverse Leakage	5 mA
Diode Configuration	Common Cathode
Diode Pair Count	1 pair
Mounting Type	Chassis Mount
Package / Case	Twin Tower
Package Name	Twin Tower
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	40 V
Voltage - Forward (Vf) (Max)	650 mV

MBR20040 Series

Part	Current - Average Rectified (Io) (per Diode)	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Voltage - Forward (Vf) (Max)	Voltage - DC Reverse (Vr) (Max)	Diode Pair Count	Diode Configuration	Package Name	Technology	Current - Reverse Leakage	Package / Case	Mounting Type
GeneSiC Semiconductor MBR20040CT	200 A	500 ns	200 mA	650 mV	40 V	1 pair	Common Cathode	Twin Tower	Schottky	5 mA	Twin Tower	Chassis Mount
GeneSiC Semiconductor MBR20040CT	200 A	500 ns	200 mA	650 mV	40 V	1 pair	Common Cathode	Twin Tower	Schottky	5 mA	Twin Tower	Chassis Mount
GeneSiC Semiconductor MBR20040CTR	200 A	500 ns	200 mA	650 mV	40 V	1 pair	Common Anode	Twin Tower	Schottky	5 mA	Twin Tower	Chassis Mount
GeneSiC Semiconductor MBR20040CTR	200 A	500 ns	200 mA	650 mV	40 V	1 pair	Common Anode	Twin Tower	Schottky	5 mA	Twin Tower	Chassis Mount

Pricing

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