Specification	SI7101DN-T1-GE3

Current - Continuous Drain (Id) (Tc)	35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	102 nC
Input Capacitance (Ciss) (Max)	3595 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	52 W, 3.7 W
Rds On (Max)	7.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	2.5 V

SI7101 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max)	Technology	Package Name	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)
Vishay Dale SI7101DN-T1-GE3	-55 °C	150 °C	30 V	7.2 mOhm	25 V	PowerPAK® 1212-8	3595 pF	MOSFET (Metal Oxide)	PowerPAK® 1212-8	3.7 W 52 W	Surface Mount	2.5 V	10 V	4.5 V	P-Channel	102 nC	35 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources