Specification	SIR472DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	20 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	23 nC
Input Capacitance (Ciss) (Max)	820 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	29.8 W, 3.9 W
Rds On (Max)	12 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SIR472 Series

Part	Current - Continuous Drain (Id) (Tc)	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	Power Dissipation (Max)	FET Type	Package / Case	Package Name	Input Capacitance (Ciss) (Max)	Vgs (Max)	Mounting Type	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)
Vishay Dale SIR472DP-T1-GE3	20 A	MOSFET (Metal Oxide)	10 V	4.5 V	23 nC	3.9 W 29.8 W	N-Channel	PowerPAK® SO-8	PowerPAK® SO-8	820 pF	20 V	Surface Mount	2.5 V	-55 °C	150 °C	12 mOhm	30 V
Vishay Dale SIR472ADP-T1-GE3	18 A	MOSFET (Metal Oxide)	10 V	4.5 V	28 nC	3.3 W 14.7 W	N-Channel	PowerPAK® SO-8	PowerPAK® SO-8	1040 pF	20 V	Surface Mount	2.3 V	-55 °C	150 °C	9 mOhm	30 V

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