Specification	SIHB11N80E-GE3

Current - Continuous Drain (Id) (Tc)	12 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	88 nC
Input Capacitance (Ciss) (Max)	1670 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	179 W
Rds On (Max)	440 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIHB11 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Rds On (Max)	Package Name	Power Dissipation (Max)	Mounting Type
Vishay Dale SIHB11N80AE-GE3	10 V	MOSFET (Metal Oxide)	N-Channel	42 nC	804 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	30 V	-55 °C	150 °C	800 V	8 A	4 V	450 mOhm	TO-263 (D2PAK)	78 W	Surface Mount
Vishay Dale SIHB11N80E-GE3	10 V	MOSFET (Metal Oxide)	N-Channel	88 nC	1670 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	30 V	-55 °C	150 °C	800 V	12 A	4 V	440 mOhm	TO-263 (D2PAK)	179 W	Surface Mount

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