Specification	AUIRF7759L2TR

Current - Continuous Drain (Id) (Tc)	375 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	300 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	12222 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	DirectFET™ Isometric L8
Package Name	DirectFET™ Isometric L8
Power Dissipation (Max)	125 W, 3.3 W
Qualification	AEC-Q101
Rds On (Max)	2.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

AUIRF7759 Series

Part	Current - Continuous Drain (Id) (Tc)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Mounting Type	Vgs(th) (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Grade	Package Name	Input Capacitance (Ciss) (Max)	Package / Case	FET Type	Power Dissipation (Max)	Rds On (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)
INFINEON AUIRF7759L2TR	375 A	MOSFET (Metal Oxide)	10 V	AEC-Q101	Surface Mount	4 V	300 nC	-55 °C	175 °C	Automotive	DirectFET™ Isometric L8	12222 pF	DirectFET™ Isometric L8	N-Channel	3.3 W 125 W	2.3 mOhm	20 V	75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources

No documents available