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71V65903S85BQ8

71V65903S85BQ8

Obsolete
Renesas Electronics Corporation

3.3V 512K X 18 ZBT SYNCHRONOUS 3.3V I/O FLOW-THROUGH SRAM

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71V65903S85BQ8

71V65903S85BQ8

Obsolete
Renesas Electronics Corporation

3.3V 512K X 18 ZBT SYNCHRONOUS 3.3V I/O FLOW-THROUGH SRAM

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Description

General part information

71V65903 Series

The 71V65903 3.3V CMOS SRAM is organized as 512K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBT™, or Zero Bus Turnaround. The 71V65903 contain address, data-in and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.

Technical Specifications

Parameters and characteristics for this part

Specification71V65903S85BQ8
Access Time8.5 ns
Memory Depth512 K
Memory FormatSRAM
Memory Interface (Type)Parallel
Memory Size9 Mbit
Memory TypeVolatile
Memory Width18 bit
Mounting TypeSurface Mount
Operating Temperature (Max)70 °C
Operating Temperature (Min)0 °C
Package / Case165-TBGA
Package Length13 mm
Package Name165-CABGA
Package Width15 mm
TechnologySDR (ZBT), SRAM - Synchronous
Voltage - Supply (Maximum)3.465 V
Voltage - Supply (Minimum)3.135 V

Pricing

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