Specification	IXTF230N085T

Current - Continuous Drain (Id) (Tc)	130 A
Drain to Source Voltage (Vdss)	85 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	187 nC
Input Capacitance (Ciss) (Max)	9900 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	i4-Pac™-5
Package Name	ISOPLUS i4-PAC™
Power Dissipation (Max)	200 W
Rds On (Max)	5.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IXTF230 Series

Part	Rds On (Max)	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Max)	Vgs(th) (Max)	Vgs (Max)
LITTELFUSE IXTF230N085T	5.3 mOhm	MOSFET (Metal Oxide)	200 W	85 V	9900 pF	ISOPLUS i4-PAC™	-55 °C	175 °C	N-Channel	130 A	i4-Pac™-5	10 V	Through Hole	187 nC	4 V	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources

No documents available