Specification	IRF7907PBF

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Maximum)	11 A
Current - Continuous Drain (Id) (Typical)	9.1 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Max)	10 nC
Input Capacitance (Ciss) (Max)	850 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SO, 8-SOIC
Package Width	3.9 mm
Power - Max	2 VA
Rds On (Max)	16.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.35 V

IRF7907 Series

Part	Rds On (Max)	Mounting Type	Current - Continuous Drain (Id) (Typical)	Current - Continuous Drain (Id) (Maximum)	Gate Charge (Max)	Technology	Drain to Source Voltage (Vdss)	Power - Max	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Package Length	Package Width	FET Feature	Channel Count	Configuration	Configuration - Features
INFINEON IRF7907PBF	16.4 mOhm	Surface Mount	9.1 A	11 A	10 nC	MOSFET (Metal Oxide)	30 V	2 VA	-55 °C	150 °C	8-SO 8-SOIC	2.35 V	850 pF	0.154 in	3.9 mm	Logic Level Gate	2	N-Channel	Dual
INFINEON IRF7907TRPBF	16.4 mOhm	Surface Mount	9.1 A	11 A	10 nC	MOSFET (Metal Oxide)	30 V	2 VA	-55 °C	150 °C	8-SO 8-SOIC	2.35 V	850 pF	0.154 in	3.9 mm	Logic Level Gate	2	N-Channel	Dual

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