Description
General part information
IQE022 Series
IQE022N06LM5CG is Infineon’s new best-in-classOptiMOS™ 5Power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate (CG) package, offering the industry’s lowest on-state resistance RDS(on)at 25˚C, superior thermal performance, and optimized parallelization. TheOptiMOS™ Source-Downis a revolutionary technology with a flipped silicon die inside, offering several advantages such as better thermal capability, higher power density and improved layout possibilities. Combined with the newPQFN 3.3x3.3Center-Gate package, IQE022N06LM5CG is targeted for high power density and performanceSMPSproducts commonly found intelecomand data servers.
Technical Specifications
Parameters and characteristics for this part
| Specification | IQE022N06LM5CGATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 24 A |
| Current - Continuous Drain (Id) (Tc) | 151 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 53 nC |
| Input Capacitance (Ciss) (Max) | 4420 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 9-PowerTDFN |
| Package Name | PG-TTFN-9-3 |
| Power Dissipation (Max) | 2.5 W, 100 W |
| Rds On (Max) | 2.2 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.3 V |
Pricing
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