F415MR12W2M1B76BOMA1

Obsolete

Infineon Technologies

MOSFET 4N-CH 1200V 75A AG-EASY1B

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Obsolete

Infineon Technologies

MOSFET 4N-CH 1200V 75A AG-EASY1B

Technical Specifications

Parameters and characteristics for this part

Specification	F415MR12W2M1B76BOMA1

Configuration	4 N-Channel
Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs [Max]	186 nC
Input Capacitance (Ciss) (Max) @ Vds	5520 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	AG-EASY1B-2
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id [Max]	5.55 V

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Configuration	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies F415MR12W2M1B76BOMA1	75 A	Chassis Mount	5.55 V	15 mOhm	Silicon Carbide (SiC)	5520 pF	150 °C	-40 °C	1200 V	1.2 kV	4 N-Channel	AG-EASY1B-2	Module	186 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 1200V (1.2kV) 75A (Tj) Chassis Mount AG-EASY1B-2

Technical documentation and resources

No documents available