Specification	IPL60R1K5C6SATMA1

Current - Continuous Drain (Id) (Tc)	3 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	9.4 nC
Input Capacitance (Ciss) (Max)	200 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	8-PowerTDFN
Package Length	5 mm
Package Name	8-ThinPak
Package Width	6 mm
Power Dissipation (Max)	26.6 W
Rds On (Max)	1.5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPL60R1 Series

Part	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	FET Type	Rds On (Max)	Vgs (Max)	Package Name	Package Length	Package Width	Mounting Type	Vgs(th) (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
INFINEON IPL60R1K5C6SATMA1	200 pF	-40 °C	150 °C	26.6 W	MOSFET (Metal Oxide)	600 V	9.4 nC	3 A	N-Channel	1.5 Ohm	20 V	8-ThinPak	5 mm	6 mm	Surface Mount	3.5 V	8-PowerTDFN	10 V

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