TB100ML

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WeEn Semiconductors

TRANS NPN 700V 1A TO92-3

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Active

WeEn Semiconductors

TRANS NPN 700V 1A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	TB100ML

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	14
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	2 W
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	700 V

TRANS NPN 700V 1A TO92-3

Part	Power - Max [Max]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Supplier Device Package	Mounting Type	Transistor Type	Current - Collector Cutoff (Max) [Max]
WeEn Semiconductors TB100ML	2 W	150 °C	700 V	1 A	14	1 V	TO-226-3, TO-92-3	TO-92-3	Through Hole	NPN	100 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 700 V 1 A 2 W Through Hole TO-92-3

Technical documentation and resources

No documents available