Specification	SIHW21N80AE-GE3

Current - Continuous Drain (Id) (Tc)	17.4 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	72 nC
Input Capacitance (Ciss) (Max)	1388 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247AD
Power Dissipation (Max)	32 W
Rds On (Max)	235 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIHW21 Series

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Package Name	Mounting Type	Technology
Vishay Dale SIHW21N80AE-GE3	32 W	17.4 A	4 V	TO-247-3	N-Channel	10 V	72 nC	-55 °C	150 °C	30 V	235 mOhm	800 V	1388 pF	TO-247AD	Through Hole	MOSFET (Metal Oxide)

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