Specification	SIHU2N80E-GE3

Current - Continuous Drain (Id) (Tc)	2.8 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	19.6 nC
Input Capacitance (Ciss) (Max)	315 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Package Name	TO-251AA
Power Dissipation (Max)	62.5 W
Rds On (Max)	2.75 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIHU E Series

Part	Technology	Vgs(th) (Max)	Package Name	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type
Vishay Dale SIHU2N80E-GE3	MOSFET (Metal Oxide)	4 V	TO-251AA	30 V	IPAK TO-251-3 Short Leads TO-251AA	10 V	Through Hole	2.75 Ohm	2.8 A	800 V	19.6 nC	315 pF	62.5 W	-55 °C	150 °C	N-Channel

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