GAN080-650EBEZ

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Nexperia USA Inc.

650 V, 80 MOHM GALLIUM NITRIDE (GAN) FET IN A DFN 8 MM X 8 MM PACKAGE

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GAN080-650EBEZ

Active

Nexperia USA Inc.

650 V, 80 MOHM GALLIUM NITRIDE (GAN) FET IN A DFN 8 MM X 8 MM PACKAGE

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

GAN080 Series

The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance.

Technical Specifications

Parameters and characteristics for this part

Specification	GAN080-650EBEZ

Current - Continuous Drain (Id) (Tc)	29 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	6 V
FET Type	N-Channel
Gate Charge (Max)	6.2 nC
Input Capacitance (Ciss) (Max)	225 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-VDFN Exposed Pad
Package Name	DFN8080-8
Power Dissipation (Max)	240 W
Rds On (Max)	80 mOhm
Technology	GaNFET (Gallium Nitride)
Vgs (Max) Negative	-6 V
Vgs (Max) Positive	7 V
Vgs(th) (Max)	2.5 V

GAN080 Series

650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

Part	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Gate Charge (Max)	Package / Case	Vgs (Max) Negative	Vgs (Max) Positive	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Mounting Type	Current - Continuous Drain (Id) (Tc)	Package Name
Nexperia USA Inc. GAN080-650EBEZ	225 pF	650 V	2.5 V	6.2 nC	8-VDFN Exposed Pad	-6 V	7 V	6 V	GaNFET (Gallium Nitride)	80 mOhm	240 W	-55 °C	150 °C	N-Channel	Surface Mount Wettable Flank	29 A	DFN8080-8