Specification	IXTQ200N075T

Current - Continuous Drain (Id) (Tc)	200 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	160 nC
Input Capacitance (Ciss) (Max)	6800 pF, 6800 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-3P-3, SC-65-3
Package Name	TO-3P
Power Dissipation (Max)	430 W
Rds On (Max)	5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IXTQ200 Series

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Package Name	Gate Charge (Max)	Technology	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)
LITTELFUSE IXTQ200N10T	550 W	9400 pF	TO-3P	152 nC	MOSFET (Metal Oxide)	5.5 mOhm	10 V	200 A	4.5 V	Through Hole	N-Channel	100 V	SC-65-3 TO-3P-3	-55 °C	175 °C	30 V
LITTELFUSE IXTQ200N06P	714 W	5400 pF	TO-3P	200 nC	MOSFET (Metal Oxide)	5 mOhm	10 V	200 A	5 V	Through Hole	N-Channel	60 V	SC-65-3 TO-3P-3	-55 °C	175 °C	20 V
LITTELFUSE IXTQ200N075T	430 W	6800 pF 6800 pF	TO-3P	160 nC	MOSFET (Metal Oxide)	5 mOhm	10 V	200 A	4 V	Through Hole	N-Channel	75 V	SC-65-3 TO-3P-3	-55 °C	175 °C	20 V
LITTELFUSE IXTQ200N10T	550 W	9400 pF	TO-3P	152 nC	MOSFET (Metal Oxide)	5.5 mOhm	10 V	200 A	4.5 V	Through Hole	N-Channel	100 V	SC-65-3 TO-3P-3	-55 °C	175 °C	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources

No documents available