Specification	2SA1182-Y,LF

Current - Collector (Ic) (Max)	500 mA
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	120
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Operating Temperature	125 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	S-Mini
Power - Max	150 mW
Transistor Type	PNP
Vce Saturation (Max)	250 mV
Voltage - Collector Emitter Breakdown (Max)	30 V

2SA1182 Series

Bipolar Transistors, PNP Bipolar Transistor, -30 V, -0.5 A, SOT-346(S-Mini)

Part	Power - Max	Mounting Type	Package / Case	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min)	Transistor Type	Package Name	Vce Saturation (Max)	Operating Temperature	Current - Collector Cutoff (Max)	Frequency - Transition	Current - Collector (Ic) (Max)
Toshiba Semiconductor and Storage 2SA1182-Y,LF	150 mW	Surface Mount	SC-59 SOT-23-3 TO-236-3	30 V	120	PNP	S-Mini	250 mV	125 °C	100 nA	200 MHz	500 mA
Toshiba Semiconductor and Storage 2SA1182-GR,LF	150 mW	Surface Mount	SC-59 SOT-23-3 TO-236-3	30 V	200	PNP	S-Mini	250 mV	125 °C	100 nA	200 MHz	500 mA

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