IXFP30N25X3M

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IXYS

MOSFET N-CH 250V 30A TO220

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IXYS

MOSFET N-CH 250V 30A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	IXFP30N25X3M

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1450 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)	36 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	TO-220 Isolated Tab
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Mounting Type	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
IXYS IXFP30N25X3M	1450 pF	20 V	60 mOhm	36 W	Through Hole	N-Channel	TO-220-3 Full Pack Isolated Tab	10 V	4.5 V	MOSFET (Metal Oxide)	TO-220 Isolated Tab	21 nC	250 V	-55 °C	150 °C	30 A
IXYS IXFP30N60X		30 V	155 mOhm	500 W	Through Hole	N-Channel	TO-220-3	10 V	4.5 V	MOSFET (Metal Oxide)	TO-220		600 V	-55 °C	150 °C	30 A	2270 pF	56 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 3.56

General part information

N-Channel 250 V 30A (Tc) 36W (Tc) Through Hole TO-220 Isolated Tab

Technical documentation and resources

No documents available