Specification	IXFK30N110P

Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	1100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	235 nC
Input Capacitance (Ciss) (Max)	13600 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-264-3, TO-264AA
Package Name	TO-264AA (IXFK)
Power Dissipation (Max)	960 W
Rds On (Max)	360 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	6.5 V

IXFK30 Series

Part	Technology	Power Dissipation (Max)	Package / Case	Input Capacitance (Ciss) (Max)	Vgs (Max)	Vgs(th) (Max)	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)
LITTELFUSE IXFK30N110P	MOSFET (Metal Oxide)	960 W	TO-264-3 TO-264AA	13600 pF	30 V	6.5 V	N-Channel	1100 V	360 mOhm	30 A	Through Hole	-55 °C	150 °C	TO-264AA (IXFK)	235 nC	10 V
LITTELFUSE IXFK30N100Q2	MOSFET (Metal Oxide)	735 W	TO-264-3 TO-264AA	8200 pF	30 V	5 V	N-Channel	1000 V	400 mOhm	30 A	Through Hole	-55 °C	150 °C	TO-264AA (IXFK)	186 nC	10 V

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