1SR159-200TE25

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Rohm Semiconductor

DIODE GEN PURP 200V 1A PMDS

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Rohm Semiconductor

DIODE GEN PURP 200V 1A PMDS

Technical Specifications

Parameters and characteristics for this part

Specification	1SR159-200TE25

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	PMDS
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V

DIODE GEN PURP 200V 1A PMDS

Part	Reverse Recovery Time (trr)	Supplier Device Package	Operating Temperature - Junction	Current - Average Rectified (Io)	Speed	Mounting Type	Technology	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr
Rohm Semiconductor 1SR159-200TE25	50 ns	PMDS	150 °C	1 A	200 mA, 500 ns	Surface Mount	Standard	DO-214AC, SMA	200 V	10 µA

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General part information

Diode 200 V 1A Surface Mount PMDS

Technical documentation and resources