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IPD135N08N3GATMA1

IPD135N08N3GATMA1

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INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; DPAK TO-252 PACKAGE; 13.5 MOHM;

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IPD135N08N3GATMA1

IPD135N08N3GATMA1

Active
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; DPAK TO-252 PACKAGE; 13.5 MOHM;

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Description

General part information

IPD135 Series

OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD135N08N3GATMA1
Current - Continuous Drain (Id) (Tc)45 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)25 nC
Input Capacitance (Ciss) (Max)1730 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NamePG-TO252-3
Power Dissipation (Max)79 W
Rds On (Max)13.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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CAD

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Documents

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