SPB42N03S2L-13 G

Obsolete

Infineon Technologies

MOSFET N-CH 30V 42A TO263-3

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Obsolete

Infineon Technologies

MOSFET N-CH 30V 42A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPB42N03S2L-13 G

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	30.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1130 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs [Max]	12.6 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Package / Case	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package
Infineon Technologies SPB42N03S2L-13 G	30 V	-55 °C	175 ░C	83 W	42 A	2 V	1130 pF	12.6 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	20 V	30.5 nC	Surface Mount	MOSFET (Metal Oxide)	4.5 V 10 V	PG-TO263-3-2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 42A (Tc) 83W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources