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STI28N60M2 - STI28N60M2

STI28N60M2

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STMicroelectronics

N-CHANNEL 600 V, 0.135 OHM TYP., 22 A MDMESH M2 POWER MOSFETS IN D2PAK PACKAGE

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DocumentsAN4337+25
STI28N60M2 - STI28N60M2

STI28N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.135 OHM TYP., 22 A MDMESH M2 POWER MOSFETS IN D2PAK PACKAGE

Deep-Dive with AI

DocumentsAN4337+25

Technical Specifications

Parameters and characteristics for this part

SpecificationSTI28N60M2
Current - Continuous Drain (Id) @ 25°C22 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs36 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1440 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)170 W
Rds On (Max) @ Id, Vgs [Max]150 mOhm
Supplier Device PackageTO-262 (I2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.82
30$ 2.23
120$ 1.91
510$ 1.70
1020$ 1.46
2010$ 1.37
5010$ 1.32

Description

General part information

STI28N60M2 Series

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.