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STN1NK60Z - SOT223-3L

STN1NK60Z

Active
STMicroelectronics

N-CHANNEL 600 V, 13 OHM TYP., 0.3 A ZENER-PROTECTED SUPERMESH POWER MOSFET IN SOT-223 PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheet+18
STN1NK60Z - SOT223-3L

STN1NK60Z

Active
STMicroelectronics

N-CHANNEL 600 V, 13 OHM TYP., 0.3 A ZENER-PROTECTED SUPERMESH POWER MOSFET IN SOT-223 PACKAGE

Deep-Dive with AI

DocumentsDatasheet+18

Technical Specifications

Parameters and characteristics for this part

SpecificationSTN1NK60Z
Current - Continuous Drain (Id) @ 25°C300 mA
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6.9 nC
Input Capacitance (Ciss) (Max) @ Vds94 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-261AA, TO-261-4
Power Dissipation (Max)3.3 W
Rds On (Max) @ Id, Vgs15 Ohm
Supplier Device PackageSOT-223
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.76
10$ 0.66
100$ 0.45
500$ 0.38
1000$ 0.32
2000$ 0.29
Digi-Reel® 1$ 0.76
10$ 0.66
100$ 0.45
500$ 0.38
1000$ 0.32
2000$ 0.29
Tape & Reel (TR) 4000$ 0.29
8000$ 0.27
12000$ 0.25
28000$ 0.25
NewarkEach (Supplied on Full Reel) 4000$ 0.33
8000$ 0.33
16000$ 0.32
24000$ 0.32

Description

General part information

STN1NK60Z Series

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.