
FM25L04B-GTR
ActiveFERROELECTRIC RAM (FRAM), 4 KBIT, 512 X 8BIT, SPI, 20 MHZ, 2.7 V TO 3.6 V SUPPLY, SOIC-8
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FM25L04B-GTR
ActiveFERROELECTRIC RAM (FRAM), 4 KBIT, 512 X 8BIT, SPI, 20 MHZ, 2.7 V TO 3.6 V SUPPLY, SOIC-8
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Technical Specifications
Parameters and characteristics for this part
| Specification | FM25L04B-GTR |
|---|---|
| Clock Frequency | 20 MHz |
| Memory Format | FRAM |
| Memory Interface | SPI |
| Memory Organization [custom] | 512 |
| Memory Organization [custom] | 8 |
| Memory Size | 4 Kbit |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Supplier Device Package | 8-SOIC |
| Technology | FRAM (Ferroelectric RAM) |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.41 | |
| 10 | $ 1.29 | |||
| 25 | $ 1.25 | |||
| 50 | $ 1.25 | |||
| 100 | $ 1.14 | |||
| Digi-Reel® | 1 | $ 1.41 | ||
| 10 | $ 1.29 | |||
| 25 | $ 1.25 | |||
| 50 | $ 1.25 | |||
| 100 | $ 1.14 | |||
| Tape & Reel (TR) | 2500 | $ 1.14 | ||
Description
General part information
FM25L04 Series
FM25L04B-GTR is a 4Kbit Serial (SPI) F-RAM in a 8 pin SOIC package. It is a 4Kbit non-volatile memory employing an advanced ferroelectric process. A F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. Unlike serial flash and EEPROM, the FM25L04B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. The FM25L04B is capable of supporting 10^14 read/write cycles, or 100 million times more write cycles than EEPROM.
Documents
Technical documentation and resources