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FM25L04B-GTR - 8 SOIC Pin View

FM25L04B-GTR

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Infineon Technologies

FERROELECTRIC RAM (FRAM), 4 KBIT, 512 X 8BIT, SPI, 20 MHZ, 2.7 V TO 3.6 V SUPPLY, SOIC-8

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FM25L04B-GTR - 8 SOIC Pin View

FM25L04B-GTR

Active
Infineon Technologies

FERROELECTRIC RAM (FRAM), 4 KBIT, 512 X 8BIT, SPI, 20 MHZ, 2.7 V TO 3.6 V SUPPLY, SOIC-8

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFM25L04B-GTR
Clock Frequency20 MHz
Memory FormatFRAM
Memory InterfaceSPI
Memory Organization [custom]512
Memory Organization [custom]8
Memory Size4 Kbit
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Supplier Device Package8-SOIC
TechnologyFRAM (Ferroelectric RAM)
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]2.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.41
10$ 1.29
25$ 1.25
50$ 1.25
100$ 1.14
Digi-Reel® 1$ 1.41
10$ 1.29
25$ 1.25
50$ 1.25
100$ 1.14
Tape & Reel (TR) 2500$ 1.14

Description

General part information

FM25L04 Series

FM25L04B-GTR is a 4Kbit Serial (SPI) F-RAM in a 8 pin SOIC package. It is a 4Kbit non-volatile memory employing an advanced ferroelectric process. A F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. Unlike serial flash and EEPROM, the FM25L04B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. The FM25L04B is capable of supporting 10^14 read/write cycles, or 100 million times more write cycles than EEPROM.

Documents

Technical documentation and resources