IXFA4N85X

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IXYS

MOSFET N-CH 850V 3.5A TO263

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IXYS

MOSFET N-CH 850V 3.5A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	IXFA4N85X

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	850 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7 nC
Input Capacitance (Ciss) (Max) @ Vds	247 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	2.5 Ohm
Supplier Device Package	TO-263 (IXFA)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type
IXYS IXFA4N85X	3.5 A	N-Channel	TO-263 (IXFA)	5.5 V	10 V	MOSFET (Metal Oxide)	150 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	7 nC	-55 °C	150 °C	247 pF	2.5 Ohm	30 V	850 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 2.25

General part information

N-Channel 850 V 3.5A (Tc) 150W (Tc) Surface Mount TO-263 (IXFA)

Technical documentation and resources

No documents available