DMN4036LK3Q-13

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Diodes Inc

MOSFET BVDSS: 31V 40V TO252 T&R

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Diodes Inc

MOSFET BVDSS: 31V 40V TO252 T&R

Technical Specifications

Parameters and characteristics for this part

Specification	DMN4036LK3Q-13

Current - Continuous Drain (Id) @ 25°C	12.2 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.2 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	2.12 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	TO-252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

N-Channel Enhancement Mode MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Qualification	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Grade	Package / Case
Diodes Inc DMN4036LK3Q-13	9.2 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	20 V	4.5 V 10 V	2.12 W	AEC-Q101	TO-252-3	Surface Mount	40 V	12.2 A	N-Channel	3 V	36 mOhm	Automotive	DPAK (2 Leads + Tab) SC-63 TO-252-3
Diodes Inc DMN4036LK3-13	9.2 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	20 V	4.5 V 10 V	2.12 W		TO-252-3	Surface Mount	40 V	8.5 A	N-Channel	3 V	36 mOhm		DPAK (2 Leads + Tab) SC-63 TO-252-3

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General part information

N-Channel Enhancement Mode MOSFET

Technical documentation and resources

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