UFT3010
ActiveMicrochip Technology
DIODE GEN PURP 100V 30A TO204AA
Deep-Dive with AI
Search across all available documentation for this part.
UFT3010
ActiveMicrochip Technology
DIODE GEN PURP 100V 30A TO204AA
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | UFT3010 |
|---|---|
| Capacitance @ Vr, F | 140 pF |
| Current - Average Rectified (Io) | 30 A |
| Current - Reverse Leakage @ Vr | 15 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | TO-3, TO-204AA |
| Reverse Recovery Time (trr) | 35 ns |
| Speed | 200 mA, 500 ns |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 930 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 53.83 | |
UFT3010 Series
DIODE GEN PURP 100V 30A TO204AA
| Part | Current - Average Rectified (Io) | Speed | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Reverse Recovery Time (trr) | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology UFT3010 | 30 A | 200 mA, 500 ns | 930 mV | 175 ░C | -65 C | 35 ns | TO-204AA, TO-3 | 100 V | Through Hole | 15 µA | 140 pF | Standard |
Description
General part information
UFT3010 Series
Diode 100 V 30A Through Hole TO-204AD (TO-3)
Documents
Technical documentation and resources
No documents available