STD9HN65M2

Obsolete

STMicroelectronics

MOSFET N-CH 650V 5.5A DPAK

Search across all available documentation for this part.

Obsolete

STMicroelectronics

MOSFET N-CH 650V 5.5A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STD9HN65M2

Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.5 nC
Input Capacitance (Ciss) (Max) @ Vds	325 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	820 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case
STMicroelectronics STD9HN65M2	150 °C	650 V	N-Channel	4 V	325 pF	Surface Mount	11.5 nC	820 mOhm	DPAK	60 W	25 V	10 V	MOSFET (Metal Oxide)	5.5 A	DPAK (2 Leads + Tab) SC-63 TO-252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 5.5A (Tc) 60W (Tc) Surface Mount DPAK

Technical documentation and resources

No documents available