IRL520NSTRLPBF

Infineon Technologies

IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 180 MOHM;

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Infineon Technologies

IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 180 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRL520NSTRLPBF

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC
Input Capacitance (Ciss) (Max) @ Vds	440 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	48 W, 3.8 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2 V

Part	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
Infineon Technologies IRL520NPBF	20 nC	10 A	440 pF	180 mOhm	4 V	10 V	Through Hole	100 V	N-Channel	48 W	2 V	16 V	MOSFET (Metal Oxide)	TO-220AB	-55 °C	175 ░C	TO-220-3
Infineon Technologies IRL520NSTRLPBF	20 nC	10 A	440 pF	180 mOhm	4 V	10 V	Surface Mount	100 V	N-Channel	3.8 W 48 W	2 V	16 V	MOSFET (Metal Oxide)	D2PAK	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 10A (Tc) 3.8W (Ta), 48W (Tc) Surface Mount D2PAK

Technical documentation and resources

No documents available