Zenode.ai Logo
Log InSign Up
STPSC4H065DLF - 8 Power VDFN

STPSC4H065DLF

Active
STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 4 A, 14.3 NC, POWERFLAT

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheetProduct Change Notice EN+14
STPSC4H065DLF - 8 Power VDFN

STPSC4H065DLF

Active
STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 4 A, 14.3 NC, POWERFLAT

Deep-Dive with AI

DocumentsDatasheetProduct Change Notice EN+14

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.62
10$ 2.18
100$ 1.73
500$ 1.47
1000$ 1.24
Digi-Reel® 1$ 2.62
10$ 2.18
100$ 1.73
500$ 1.47
1000$ 1.24
Tape & Reel (TR) 3000$ 1.10
NewarkEach (Supplied on Cut Tape) 1$ 2.27
10$ 2.14
25$ 2.04
50$ 1.97
100$ 1.90
250$ 1.83
500$ 1.76
1000$ 1.72

Description

General part information

STPSC4H065DLF Series

This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Qualified in low profile package, the STPSC4H065DLF in PowerFLAT 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains.