IPD75N04S406ATMA1

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Infineon Technologies

IPD75N04S4-06 IS AN AUTOMOTIVE MOSFET OFFERING 40 V, N-CH, 5.9 MΩ MAX, DPAK, OPTIMOS™-T2 FOR HIGH PERFORMANCE IN AUTOMOTIVE APPLICATIONS.

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Infineon Technologies

IPD75N04S4-06 IS AN AUTOMOTIVE MOSFET OFFERING 40 V, N-CH, 5.9 MΩ MAX, DPAK, OPTIMOS™-T2 FOR HIGH PERFORMANCE IN AUTOMOTIVE APPLICATIONS.

Technical Specifications

Parameters and characteristics for this part

Specification	IPD75N04S406ATMA1

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2550 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	58 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	5.9 mOhm
Supplier Device Package	PG-TO252-3-313
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Grade	Mounting Type	Qualification	Package / Case	Power Dissipation (Max)
Infineon Technologies IPD75N04S406ATMA1	32 nC	40 V	20 V	PG-TO252-3-313	4 V	10 V	2550 pF	N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	5.9 mOhm	75 A	Automotive	Surface Mount	AEC-Q101	DPAK (2 Leads + Tab) SC-63 TO-252-3	58 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 75A (Tc) 58W (Tc) Surface Mount PG-TO252-3-313

Technical documentation and resources