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Description

General part information

JANTXV2N2907AUB-Transistor Series

This specification covers the performance requirements for PNP, silicon, switching 2N2906A and 2N2907A transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type, and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device, as specified in MIL-PRF-19500/291. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV2N2907AUB/TR
Current - Collector (Ic) (Max)0.6 mA
Current - Collector Cutoff (Max)50 nA
DC Current Gain (hFE) (Min)100
GradeMilitary
Mounting TypeSurface Mount
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / Case4-SMD, No Lead
Package NameUB
Power - Max0.5 W
QualificationMIL-PRF-19500, 291
Transistor TypePNP
Vce Saturation (Max)1.6 V
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

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CAD

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