STW65N65DM2AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 42 MOHM TYP., 60 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE

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STW65N65DM2AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 42 MOHM TYP., 60 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW65N65DM2AG

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	5500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	446 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STW65N65DM2AG Series

Automotive-grade N-channel 650 V, 42 mOhm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Grade	Supplier Device Package
STMicroelectronics STW65N65DM2AG	TO-247-3	10 V	Through Hole	50 mOhm	60 A	5 V	5500 pF	N-Channel	-55 °C	150 °C	AEC-Q101	MOSFET (Metal Oxide)	446 W	120 nC	25 V	650 V	Automotive	TO-247-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 10.02
		30	$ 8.00
		120	$ 7.16
		510	$ 6.32
		1020	$ 5.69
Newark	Each	1	$ 13.77
		10	$ 13.76
		25	$ 9.44
		50	$ 8.97
		100	$ 8.49
		250	$ 8.18

Description

General part information

STW65N65DM2AG Series

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.