AOP605

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 8DIP

Search across all available documentation for this part.

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 8DIP

Technical Specifications

Parameters and characteristics for this part

Specification	AOP605

Configuration	N and P-Channel
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	16.6 nC
Input Capacitance (Ciss) (Max) @ Vds	820 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Power - Max [Max]	2.5 W
Rds On (Max) @ Id, Vgs [Max]	28 mOhm
Supplier Device Package	8-PDIP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Power - Max [Max]	Mounting Type	FET Feature	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Configuration	Vgs(th) (Max) @ Id	Technology	Package / Case	Package / Case	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
Alpha & Omega Semiconductor Inc. AOP605	2.5 W	Through Hole	Logic Level Gate	30 V	16.6 nC	8-PDIP	N and P-Channel	3 V	MOSFET (Metal Oxide)	0.3 in	8-DIP	7.62 mm	-55 °C	150 °C	28 mOhm	820 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 2.5W Through Hole 8-PDIP

Technical documentation and resources