STW26NM60ND

Obsolete

STMicroelectronics

MOSFET N-CH 600V 21A TO247

Search across all available documentation for this part.

Obsolete

STMicroelectronics

MOSFET N-CH 600V 21A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	STW26NM60ND

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54.6 nC
Input Capacitance (Ciss) (Max) @ Vds	1817 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	175 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Technology	Operating Temperature	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]
STMicroelectronics STW26NM60ND	Through Hole	175 mOhm	25 V	21 A	1817 pF	N-Channel	5 V	TO-247-3	10 V	54.6 nC	600 V	190 W	MOSFET (Metal Oxide)	150 °C	TO-247-3
STMicroelectronics STW26NM60	Through Hole		30 V	30 A	2900 pF	N-Channel	5 V	TO-247-3	10 V		600 V	313 W	MOSFET (Metal Oxide)		TO-247-3	102 nC	-55 °C	150 °C	135 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 21A (Tc) 190W (Tc) Through Hole TO-247-3

Technical documentation and resources