BSZ0907NDXTMA2

Obsolete

Infineon Technologies

MOSFET 2N-CH 30V 6.7A WISON-8

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET 2N-CH 30V 6.7A WISON-8

Technical Specifications

Parameters and characteristics for this part

Specification	BSZ0907NDXTMA2

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C [Max]	8.5 A
Current - Continuous Drain (Id) @ 25°C [Min]	6.7 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs	6.4 nC, 7.9 nC
Input Capacitance (Ciss) (Max) @ Vds	900 pF, 730 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max	860 mW, 700 mW
Rds On (Max) @ Id, Vgs [Max]	9.5 mOhm
Rds On (Max) @ Id, Vgs [Min]	7.2 mOhm
Supplier Device Package	PG-WISON-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Package / Case	Rds On (Max) @ Id, Vgs [Min]	Rds On (Max) @ Id, Vgs [Max]	Configuration	FET Feature	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Technology	Power - Max	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies BSZ0907NDXTMA2	8-PowerVDFN	7.2 mOhm	9.5 mOhm	2 N-Channel (Dual)	4.5V Drive Logic Level Gate	PG-WISON-8	6.4 nC 7.9 nC	30 V	6.7 A	8.5 A	MOSFET (Metal Oxide)	700 mW 860 mW	Surface Mount	-55 °C	150 °C	2 V	730 pF 900 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 6.7A (Ta), 8.5A (Ta) 700mW (Ta), 860mW (Ta) Surface Mount PG-WISON-8

Technical documentation and resources