RN2911FE(TE85L,F)

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Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

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Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Technical Specifications

Parameters and characteristics for this part

Specification	RN2911FE(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	100 mW
Supplier Device Package	ES6
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Supplier Device Package	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Package / Case	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]
Toshiba Semiconductor and Storage RN2911FE(TE85L,F)	ES6	Surface Mount	50 V	100 nA	200 MHz	120	2 PNP - Pre-Biased (Dual)	SOT-563 SOT-666	300 mV	100 mW	100 mA
Toshiba Semiconductor and Storage RN2911(T5L,F,T)	US6	Surface Mount	50 V	100 nA	200 MHz	120	2 PNP - Pre-Biased (Dual)	6-TSSOP SC-88 SOT-363	300 mV	200 mW	100 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6

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