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AOWF600A60 - TO262F

AOWF600A60

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 8A TO262F

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AOWF600A60 - TO262F

AOWF600A60

Active
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 8A TO262F

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationAOWF600A60
Current - Continuous Drain (Id) @ 25°C8 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11.5 nC
Input Capacitance (Ciss) (Max) @ Vds608 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)23 W
Rds On (Max) @ Id, Vgs600 mOhm
Supplier Device PackageTO-262F
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1000$ 0.92

Description

General part information

AOWF600 Series

N-Channel 600 V 8A (Tj) 23W (Tc) Through Hole TO-262F

Documents

Technical documentation and resources