BZS55C3V3

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Taiwan Semiconductor Corporation

DIODE ZENER 3.3V 500MW 1206

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Taiwan Semiconductor Corporation

DIODE ZENER 3.3V 500MW 1206

Technical Specifications

Parameters and characteristics for this part

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Tolerance	Power - Max [Max]	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Impedance (Max) (Zzt) [Max]	Voltage - Zener (Nom) (Vz)
Taiwan Semiconductor Corporation BZS55C20 RAG	-55 °C	150 °C	1206 (3216 Metric)	Surface Mount	5 %	500 mW	100 nA	1206	1.5 V	55 Ohms	20 V
Taiwan Semiconductor Corporation BZS55C13 RAG	-55 °C	150 °C	1206 (3216 Metric)	Surface Mount	5 %	500 mW	100 nA	1206	1.5 V	26 Ohms	13 V
Taiwan Semiconductor Corporation BZS55C3V3	-55 °C	150 °C	1206 (3216 Metric)	Surface Mount	5 %	500 mW	2 µA	1206	1.5 V	85 Ohms	3.3 V
Taiwan Semiconductor Corporation BZS55C24	-55 °C	150 °C	1206 (3216 Metric)	Surface Mount	5 %	500 mW	100 nA	1206	1.5 V		24 V
Taiwan Semiconductor Corporation BZS55C36	-55 °C	150 °C	1206 (3216 Metric)	Surface Mount	5 %	500 mW	100 nA	1206	1.5 V		36 V
Taiwan Semiconductor Corporation BZS55C3V6 RAG	-55 °C	150 °C	1206 (3216 Metric)	Surface Mount	5 %	500 mW	2 µA	1206	1.5 V	85 Ohms	3.6 V
Taiwan Semiconductor Corporation BZS55C16	-55 °C	150 °C	1206 (3216 Metric)	Surface Mount	5 %	500 mW	100 nA	1206	1.5 V	40 Ohms	16 V
Taiwan Semiconductor Corporation BZS55C3V9	-55 °C	150 °C	1206 (3216 Metric)	Surface Mount	5 %	500 mW	2 µA	1206	1.5 V	85 Ohms	3.9 V
Taiwan Semiconductor Corporation BZS55C18	-55 °C	150 °C	1206 (3216 Metric)	Surface Mount	5 %	500 mW	100 nA	1206	1.5 V	50 Ohms	18 V
Taiwan Semiconductor Corporation BZS55C18 RAG	-55 °C	150 °C	1206 (3216 Metric)	Surface Mount	5 %	500 mW	100 nA	1206	1.5 V	50 Ohms	18 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Zener Diode 3.3 V 500 mW ±5% Surface Mount 1206

Technical documentation and resources