PSMN2R6-30YLC,115

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Nexperia USA Inc.

N-CHANNEL 30 V, 2.8 MΩ LOGIC LEVEL MOSFET IN LFPAK USING NEXTPOWER TECHNOLOGY

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PSMN2R6-30YLC,115

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Nexperia USA Inc.

N-CHANNEL 30 V, 2.8 MΩ LOGIC LEVEL MOSFET IN LFPAK USING NEXTPOWER TECHNOLOGY

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN2R6 Series

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN2R6-30YLC,115

Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	39 nC
Input Capacitance (Ciss) (Max)	2435 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	106 W
Rds On (Max)	2.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	1.95 V

PSMN2R6 Series

Part	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Rds On (Max)	Mounting Type	Technology	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Input Capacitance (Ciss) (Max)	Vgs (Max)
Nexperia USA Inc. PSMN2R6-30YLC,115	39 nC	30 V	1.95 V	SC-100 SOT-669	10 V	4.5 V	100 A	106 W	2.8 mOhm	Surface Mount	MOSFET (Metal Oxide)	LFPAK56 Power-SO8	-55 °C	175 °C	N-Channel	2435 pF	20 V