IXFY8N65X2

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IXYS

MOSFET N-CH 650V 8A TO252AA

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IXYS

MOSFET N-CH 650V 8A TO252AA

Technical Specifications

Parameters and characteristics for this part

Specification	IXFY8N65X2

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	790 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	450 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	FET Type	Power Dissipation (Max)	Supplier Device Package	Package / Case
IXYS IXFY8N65X2	450 mOhm	8 A	10 V	30 V	11 nC	790 pF	MOSFET (Metal Oxide)	5 V	650 V	-55 °C	150 °C	Surface Mount	N-Channel	150 W	TO-252AA	DPAK (2 Leads + Tab) SC-63 TO-252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	350	$ 1.72

General part information

N-Channel 650 V 8A (Tc) 150W (Tc) Surface Mount TO-252AA

Technical documentation and resources

No documents available