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STMICROELECTRONICS STPSC5H12D

IDH04SG60CXKSA2

Obsolete
INFINEON

SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN III SERIES, SINGLE, 600 V, 4 A, 4.5 NC, TO-220

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STMICROELECTRONICS STPSC5H12D

IDH04SG60CXKSA2

Obsolete
INFINEON

SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN III SERIES, SINGLE, 600 V, 4 A, 4.5 NC, TO-220

Find alt

Description

General part information

IDH04SG60 Series

Diode 600 V 4A Through Hole PG-TO220-2-1

Technical Specifications

Parameters and characteristics for this part

SpecificationIDH04SG60CXKSA2
Capacitance80 pF
Current - Average Rectified (Io)4 A
Current - Reverse Leakage25 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseTO-220-2
Package NamePG-TO220-2-1
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Speed - Fast Recovery (Minimum)500 mA
Speed - Recovery Current500 mA, 500 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max)2.3 V

Pricing

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CAD

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Documents

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