Specification	SI4062DY-T1-GE3

Current - Continuous Drain (Id) (Tc)	32.1 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	60 nC
Input Capacitance (Ciss) (Max)	3175 pF
Mounting Type	Surface Mount
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	7.8 W
Rds On (Max)	4.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.6 V

SI4062 Series

Part	Vgs (Max)	Rds On (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	FET Type	Package Length	Package Name	Package Width	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Mounting Type
Vishay Dale SI4062DY-T1-GE3	20 V	4.2 mOhm	2.6 V	60 V	60 nC	N-Channel	0.154 in	8-SOIC	3.9 mm	3175 pF	32.1 A	MOSFET (Metal Oxide)	10 V	4.5 V	7.8 W	Surface Mount

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