Specification	SIJ470DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	58.8 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	7.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	56 nC
Input Capacitance (Ciss) (Max)	2050 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	5 W, 56.8 W
Rds On (Max)	9.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

SIJ470 Series

Part	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	Package Name	Input Capacitance (Ciss) (Max)	Package / Case	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	FET Type
Vishay Dale SIJ470DP-T1-GE3	MOSFET (Metal Oxide)	100 V	3.5 V	5 W 56.8 W	-55 °C	150 °C	9.1 mOhm	Surface Mount	10 V	7.5 V	56 nC	PowerPAK® SO-8	2050 pF	PowerPAK® SO-8	58.8 A	20 V	N-Channel

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