AOTF2618L

Active

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 7A/22A TO220-3F

Search across all available documentation for this part.

Active

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 7A/22A TO220-3F

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF2618L

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	950 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	2.1 W, 23.5 W
Rds On (Max) @ Id, Vgs	19 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Vgs (Max)	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs [x]
Alpha & Omega Semiconductor Inc. AOTF2618L	2.1 W 23.5 W	19 mOhm	MOSFET (Metal Oxide)	Through Hole	20 V	TO-220-3 Full Pack	TO-220F	2.5 V	950 pF	60 V	-55 °C	175 ░C	4.5 V 10 V	N-Channel	20 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly