2N6770T1

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Microsemi Corporation

MOSFET N-CH 500V 12A TO254AA

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Microsemi Corporation

MOSFET N-CH 500V 12A TO254AA

Technical Specifications

Parameters and characteristics for this part

Specification	2N6770T1

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-254AA, TO-254-3
Power Dissipation (Max)	4 W, 150 W
Supplier Device Package	TO-254AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
Microsemi Corporation 2N6770T1	4 W 150 W	4 V	10 V	Through Hole	120 nC	MOSFET (Metal Oxide)	500 V	N-Channel	12 A	20 V	TO-254-3 TO-254AA	-55 °C	150 °C	TO-254AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 12A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-254AA

Technical documentation and resources

No documents available