PMCM4401VNEAZ
UnknownNexperia USA Inc.
12V, N-CHANNEL TRENCH MOSFET
PMCM4401VNEAZ
UnknownNexperia USA Inc.
12V, N-CHANNEL TRENCH MOSFET
Description
General part information
PMCM4401VNE Series
N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
Technical Specifications
Parameters and characteristics for this part
| Specification | PMCM4401VNEAZ |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 4.7 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On) | 1.5 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 9 nC |
| Input Capacitance (Ciss) (Max) | 335 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 4-XFBGA, WLCSP |
| Package Length | 0.78 mm |
| Package Name | 4-WLCSP |
| Package Width | 0.78 mm |
| Power Dissipation (Max) | 400 mW, 12.5 W |
| Rds On (Max) | 0.042 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 900 mV |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
RC Thermal Models
LFPAK MOSFET thermal design guide, Chinese version
wafer level chip-size package; 4 bumps (2 x 2); 0.4 mm pitch; 0.8 mm x 0.8 mm x 0.15 mm body
Nexperia package poster
LFPAK MOSFET thermal design guide - Part 2
Using power MOSFETs in parallel
WLCSP Chinese Translation
pmcm4401vne-ssmos_fr
Power MOSFET frequently asked questions and answers
适合移动和便携式设备的 大批量小信号MOSFET， 采用WLCSP和无引脚DFN封装
High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packages
12V, N-channel Trench MOSFET
Small-signal MOSFETs in WLCSP - Smallest size - lowest RDS(on)