Specification	SIA929DJ-T1-GE3

Channel Count	2
Configuration	P-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	4.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Max)	21 nC
Input Capacitance (Ciss) (Max)	575 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-70-6 Dual
Package Name	PowerPAK® SC-70-6 Dual
Power - Max	7.8 W
Rds On (Max)	64 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1.1 V

SIA929 Series

Part	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	FET Feature	Power - Max	Rds On (Max)	Package Name	Channel Count	Configuration	Configuration - Features	Technology	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SIA929DJ-T1-GE3	4.5 A	1.1 V	PowerPAK® SC-70-6 Dual	30 V	Surface Mount	575 pF	21 nC	Logic Level Gate	7.8 W	64 mOhm	PowerPAK® SC-70-6 Dual	2	P-Channel	Dual	MOSFET (Metal Oxide)	-55 °C	150 °C

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