Specification	SI5449DC-T1-E3

Current - Continuous Drain (Id) (Ta)	3.1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	11 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	Flat Leads, 8-SMD
Package Name	1206-8 ChipFET™
Power Dissipation (Max)	1.3 W
Rds On (Max)	85 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	600 mV

SI5449 Series

Part	Technology	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Mounting Type	Rds On (Max)	FET Type	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Vgs (Max)
Vishay Dale SI5449DC-T1-E3	MOSFET (Metal Oxide)	2.5 V	4.5 V	Surface Mount	85 mOhm	P-Channel	8-SMD Flat Leads	-55 °C	150 °C	1206-8 ChipFET™	30 V	1.3 W	11 nC	600 mV	3.1 A	12 V

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